PART |
Description |
Maker |
MGSF3454XT1 MGSF3454XT1_D ON1908 MGSF3454XT1-D ON1 |
From old datasheet system N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET Low Rds(on) Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors
|
MOTOROLA[Motorola, Inc] ON Semiconductor
|
MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Motorola Semiconductor Motorola, Inc.
|
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTW8N50E |
TMOS E FET POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA INC Motorola, Inc
|
IRF830-D |
Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS
|
ON Semiconductor
|
MTP8N50E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
|
ON Semiconductor
|
MTE50N50 |
(MTE50N45 - MTE60N40) POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
|
Motorola
|